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UNISONIC TECHNOLOGIES CO., LTD 5N60
4.5 Amps, 600 Volts N-CHANNEL MOSFET
1
Power MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 2.5 @VGS = 10 V * Ultra low gate charge ( typical 15 nC ) * Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 5N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal 5N60-TA3-T 5N60-TF3-T Order Number Lead Free Plating 5N60L-TA3-T 5N60L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
5N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATING (TC = 25
PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) unless otherwise specified) SYMBOL VDSS VGSS IAR
Power MOSFET
RATINGS UNIT 600 V 30 V 4.5 A TC = 25 4.5 A ID Continuous Drain Current TC = 100 2.6 A Pulsed Drain Current (Note 1) IDM 18 A Avalanche Energy, Single Pulsed (Note 2) EAS 210 mJ Avalanche Energy, Repetitive Limited by TJ(MAX) EAR 10 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TC = 25 100 W Power Dissipation PD Derate above 25 0.8 W/ Junction Temperature TJ +150 Operating and Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case Case-to-Sink SYMBOL JA JC CS RATINGS 62.5 1.25 0.5 UNIT C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TC = 25
PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Breakdown Voltage Temperature Coefficient Gate-Body Leakage Current Forward Reverse SYMBOL BVDSS IDSS BVDSS/ TJ IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD
unless otherwise specified) TEST CONDITIONS MIN 600 1 10 0.6 100 -100 2.0 2.0 4.7 515 55 6.5 10 42 38 46 15 2.5 6.6 4.0 2.5 TYP MAX UNIT V A A V/ nA nA V S pF pF pF ns ns ns ns nC nC nC
VGS =0V, ID = 250A VDS =600V, VGS = 0V VDS =480V, TC = 125 ID =250A, Referenced to 25 VGS =30V, VDS = 0V VGS =-30V, VDS = 0V VDS =VGS, ID = 250A VGS =10V, ID = 2.25A VDS =40V, ID = 2.25A (Note 4) VDS = 25V, VGS = 0V, f = 1.0MHz
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Delay Time Turn-On Rise Time Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
670 72 8.5 30 90 85 100 19
VDD = 300V, ID =4.5 A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4, 5)
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode Forward ISM Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Note 1. Repetitive Rating : Pulse width limited by TJ 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT 1.4 4.5 18 300 2.2 V A A ns C
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1 s Duty Factor 0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50k 12V 0.2 F 0.3 F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 3mA VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RD
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On-Region Characteristics
V GS Top: 5.0V 101 Bottorm :4.5V
Power MOSFET
Transfer Characteristics
5V
Drain Current, ID (A)
10
Drain Current, ID (A)
1
100
25 100 *Notes: 1. VDS=40V 2. 250s Pulse Test 10-1 2 4 6 8 Gate-Source Voltage, VGS (V) 10
10
-1
4.5V 10-2 10-1
*Notes: 1. 250s Pulse Test 2. TC=25 100 101 Drain-Source Voltage, VDS (V)
6 5 4 3 2 1 0
On-Resistance Variation vs Drain Current . and Gate Voltage
Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 10
1
)
Drain-Source On-Resistance, RDS(O N) (
100s 1ms 10 0m 10ms s DC
VGS=20V
Drain Current, I D (A)
VGS =10V
100
10-1
*Note: TJ=25 0 2 4 6 Drain Current, ID (A) 8 10 10 -2 0 10
*Notes: 1. TC=25 2. TJ=150 3. Single Pulse 10 10 Drain-Source Voltage, VDS (V)
1 2
10
3
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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